PROPERTIES OF SILICON CARBIDE CRYSTAL MATERIALS
| Property | 4H-SiC Single Crystal | 6H-SiC Single Crystal |
| Lattice Parameters (Å) | a=3.076 c=10.053 | a=3.073 c=15.117 |
| Stacking Sequence | ABCB | ABCACB |
| Density | 3.21 | 3.21 |
| Mohs Hardness | ~9.2 | ~9.2 |
| Thermal Expansion Coefficient (CTE) (/K) | 4-5 x 10-6 | 4-5 x 10-6 |
| Refraction Index @750nm | no = 2.61 ne = 2.66 | no = 2.60 ne = 2.65 |
| Dielectric Constant | c ~ 9.66 | c ~ 9.66 |
| Doping Type | N-type or Semi-insulating | N-type or Semi-insulating |
| Thermal Conductivity (W/cm-K @298K) (N-type, 0.02 ohm-cm) | a~4.2 c~3.7 | |
| Thermal Conductivity (W/cm-K @298K) (Semi-insulating type) | a~4.9 c~3.9
| a~4.6 c~3.2
|
| Band-gap (eV) | 3.23 | 3.02 |
| Break-Down Electrical Field (V/cm) | 3-5 x 106 | 3-5 x 106 |
| Saturation Drift Velocity (m/s) | 2.0 x 105 | 2.0 x 105 |
| Ingot Sizes | Diameter: 2, 3, 4, 6 ,8inch Thickness: 15-30 mm other sizes are available and can be custom-made upon request | |
| Product Grades | A Grade Zero micropipe density (MPD 1 cm-2) B Grade Production grade (MPD 5 cm-2) C Grade Research grade (MPD 10 cm-2) D Grade Dummy grade (MPD 15 cm-2) | |
Reviews
There are no reviews yet.